![j51](/images/Pdf_File/publication_icons/j51_.jpg)
[j51]Zuo, S., Heidari, H. , Farina, D. and Nazarpour, K. (2020) Miniaturized magnetic sensors for implantable magnetomyography. Advanced Materials Technologies, 2000185. (doi: 10.1002/admt.202000185) (Early Online Publication)![pdf small](/images/pdf_small.png)
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[j50]Zuo, S., Schmalz, J., Özden, M.-Ö., Gerken, M., Su, J., Niekiel, F., Lofink, F., Nazarpour, K. and Heidari, H. (2020) Ultrasensitive magnetoelectric sensing system for pico-Tesla MagnetoMyoGraphy. IEEE Transactions on Biomedical Circuits and Systems, (doi: 10.1109/TBCAS.2020.2998290) (Early Online Publication)![pdf small](/images/pdf_small.png)
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[j49]Fan, H., Wu, X., Ghannam, R. , Feng, Q., Heidari, H. and Imran, M. A. (2020) Teaching embedded systems for energy harvesting applications: a comparison of teaching methods adopted in UESTC and KTH. IEEE Access, (doi: 10.1109/ACCESS.2020.2980336) ![pdf small](/images/pdf_small.png)
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[j48]Karbalaei, M., Dideban, D. and Heidari, H. (2020) A nano-FET structure comprised of inherent paralleled TFET and MOSFET with improved performance. Ain Shams Engineering Journal.![pdf small](/images/pdf_small.png)
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[j47]Fan, H., Cheng, W., Feng, Q., Feng, L., Li, D., Diao, X., Cen, Y. and Heidari, H. (2020) High-precision adaptive slope compensation circuit for DC-DC converter in wearable devices. IEEE Access, (doi: 10.1109/ACCESS.2020.2974852) ![pdf small](/images/pdf_small.png)
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[j46] Yuan, M., Das, R. , Ghannam, R. , Wang, Y., Reboud, J. , Fromme, R., Moradi, F. and Heidari, H. (2020) Electronic contact lens: a platform for wireless health monitoring applications.Advanced Intelligent Systems, (doi: 10.1002/aisy.201900190) ![pdf small](/images/pdf_small.png)
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[j45]Das, R. , Moradi, F. and Heidari, H. (2020) Biointegrated and wirelessly powered implantable brain devices: a review. IEEE Transactions on Biomedical Circuits and Systems, (Accepted for Publication)![pdf small](/images/pdf_small.png)
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[j44] Karbalaei, M., Dideban, D. and Heidari, H. (2020) Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: a simulation study. Results in Physics, 16, 102823. (doi:10.1016/j.rinp.2019.102823)
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